IGBT
SGH80N60UFD
Ultrafast IGBT
General Description
Features
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
?
?
?
?
High speed switching
Low saturation voltage : V CE(sat) = 2.1 V @ I C = 40A
High input impedance
CO-PAK, IGBT with FRD : t rr = 50ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
G C E
TO-3P N
E
Absolute Maximum Ratings
T C = 25 ° C unless otherwise noted
Symbol
Description
SGH80N60UFD
Units
V CES
V GES
I C
I CM (1)
I F
I FM
P D
T J
T stg
T L
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes,/8” from Case for 5 Seconds
@ T C = 25 ° C
@ T C = 100 ° C
@ T C = 100 ° C
@ T C = 25 ° C
@ T C = 100 ° C
600
± 20
80
40
220
25
280
195
78
-55 to +150
-55 to +150
300
V
V
A
A
A
A
A
W
W
° C
° C
° C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R θ JC (IGBT)
R θ JC (DIODE)
R θ JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.64
0.83
40
Units
° C / W
° C / W
° C / W
?2002 Fairchild Semiconductor Corporation
SGH80N60UFD Rev. B1
相关PDF资料
SGH80N60UFTU IGBT HI PERFORM 00V 40A TO-3P
SGL160N60UFDTU IGBT ULTRA FAST 600V 160A TO264
SGL50N60RUFDTU IGBT 80A 600V W/DIODE TO-264
SGP10N60RUFDTU IGBT W/DIODE 600V 10A TO-220
SGP23N60UFDTU IGBT W/DIODE 600V TO-220
SGP23N60UFTU IGBT W/DIODE 600V TO-220-3
SGPD.12A EVAL KIT GPS SGP.12A ANTENNA
SGPD.15A EVAL KIT GPS SGP.15A ANTENNA
相关代理商/技术参数
SGH80N60UFTU 功能描述:IGBT 晶体管 Dis High Perf IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
SGHA36AT0400 制造商:General Electric Company 功能描述:SGH 3P 600V 400A
SGHD-002GA-P0.2 功能描述:CONN TERMINAL GHD 30-26AWG RoHS:是 类别:连接器,互连式 >> 矩形 - 触点 系列:GHD 标准包装:90,000 系列:* 其它名称:035021-1301350211-1301350211301
SGHL04600 制造商:Hammond Manufacturing 功能描述:HEATER FAN
SGHT00Y SGH00Y WAF 制造商:Fairchild Semiconductor Corporation 功能描述:
SGHT08Y SGH00Y WAF 制造商:Fairchild Semiconductor Corporation 功能描述:
SGI02N120 功能描述:IGBT 晶体管 FAST IGBT NPT TECH 1200V 2A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
SGI02N120XKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 6.2A 3-Pin(3+Tab) TO-262 Tube 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 1200V 6.2A 62W TO262-3